Invention Grant
- Patent Title: Anti-reflection structure using surface plasmon and high-K dielectric material and method of manufacturing the anti-reflection structure
- Patent Title (中): 使用表面等离子体和高K介电材料的防反射结构及其制造方法
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Application No.: US13064290Application Date: 2011-03-16
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Publication No.: US08953243B2Publication Date: 2015-02-10
- Inventor: Young-Jun Park , Jong-min Kim , Huamin Li , Won-Jong Yoo
- Applicant: Young-Jun Park , Jong-min Kim , Huamin Li , Won-Jong Yoo
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR10-2010-0026817 20100325
- Main IPC: G02B1/10
- IPC: G02B1/10 ; G02B5/00 ; B82Y30/00 ; G02B1/11
Abstract:
An anti-reflection structure using surface plasmons and a high-k dielectric material, and a method of manufacturing the anti-reflection structure. The anti-reflection structure may include a high-k dielectric layer formed on a substrate, the high-k dielectric layer configured to allow incident light to pass therethrough, and a nano-material layer on the high-k dielectric layer. The high-k dielectric layer may include at least one of zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), tantalum oxide (Ta2O5), lanthanum oxide (La2O3), yttrium oxide (Y2O3) and aluminum oxide (Al2O3).
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