Invention Grant
- Patent Title: Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
- Patent Title (中): 具有垂直磁性层的侧面屏蔽磁阻(MR)读头
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Application No.: US12799924Application Date: 2010-05-05
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Publication No.: US08953285B2Publication Date: 2015-02-10
- Inventor: Yuchen Zhou , Kunliang Zhang , Zhigang Bai
- Applicant: Yuchen Zhou , Kunliang Zhang , Zhigang Bai
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/39
- IPC: G11B5/39 ; B82Y10/00 ; B82Y25/00 ; G01R33/09 ; H01F10/30 ; H01F10/32 ; H01F41/30 ; B82Y40/00

Abstract:
A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA) which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After patterning, a conformal insulation layer is formed along the sensor sidewall. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths
Public/Granted literature
- US20110273802A1 Side shielded magnetoresistive(MR) read with perpendicular magnetic free layer Public/Granted day:2011-11-10
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