Invention Grant
- Patent Title: Stack memory apparatus
- Patent Title (中): 堆栈记忆装置
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Application No.: US13601871Application Date: 2012-08-31
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Publication No.: US08953361B2Publication Date: 2015-02-10
- Inventor: Nam Kyun Park
- Applicant: Nam Kyun Park
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0034444 20120403
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A stack memory apparatus is provided. The stack memory apparatus includes a semiconductor substrate, and a plurality of memory cells, each including a switching element and a variable resister connected in parallel, stacked on the semiconductor substrate. The plurality of memory cells is configured to be connected to each other in series.
Public/Granted literature
- US20130258752A1 STACK MEMORY APPARATUS Public/Granted day:2013-10-03
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