Invention Grant
- Patent Title: Magnetic memory device having bidirectional read scheme
- Patent Title (中): 具有双向读取方案的磁存储器件
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Application No.: US13967466Application Date: 2013-08-15
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Publication No.: US08953368B2Publication Date: 2015-02-10
- Inventor: Soo-Ho Cha
- Applicant: Soo-Ho Cha
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0119114 20121025
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
A data reading method of a magnetic memory device includes generating read commands, supplying a read current to a selected magnetic memory element in a first direction and in turn in a second direction under different ones of the read commands, respectively, and sensing the magnitude of the read current flowing through the selected magnetic memory element to read data stored at the selected magnetic memory element.
Public/Granted literature
- US20140119107A1 MAGNETIC MEMORY DEVICE HAVING BIDIRECTIONAL READ SCHEME Public/Granted day:2014-05-01
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