Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
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Application No.: US13425121Application Date: 2012-03-20
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Publication No.: US08953371B2Publication Date: 2015-02-10
- Inventor: Yasuhiro Shiino , Shigefumi Irieda , Kenri Nakai , Eietsu Takahashi , Koki Ueno
- Applicant: Yasuhiro Shiino , Shigefumi Irieda , Kenri Nakai , Eietsu Takahashi , Koki Ueno
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-192700 20110905
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/56 ; G11C16/06 ; G11C16/04 ; G11C16/34
Abstract:
A semiconductor storage device has a plurality of memory cells each having a control gate that are formed on a well. The semiconductor storage device has a control circuit that applies a voltage to the well and the control gates.In an erase operation of the memory cell, the control circuit applies a first pulse wave of a first erasure voltage that rises stepwise to the well and then applies a second pulse wave of a second erasure voltage to the well.
Public/Granted literature
- US20130058171A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2013-03-07
Information query
