Invention Grant
- Patent Title: Split gate programming
- Patent Title (中): 分割门编程
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Application No.: US13536307Application Date: 2012-06-28
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Publication No.: US08953378B2Publication Date: 2015-02-10
- Inventor: Cheong Min Hong , Sung-Taeg Kang
- Applicant: Cheong Min Hong , Sung-Taeg Kang
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method for programming a split gate memory cell includes performing a first programming of the split gate memory cell in a first programming cycle of the split gate memory cell; and, subsequent to the performing the first programming of the split gate memory cell, performing a second programming of the split gate memory cell in the first programming cycle, wherein the first programming is characterized as one of source-side injection (SSI) programming and channel-initiated secondary electron (CHISEL) programming, and the second programming is characterized as the other of SSI programming and CHISEL programming.
Public/Granted literature
- US20140003155A1 SPLIT GATE PROGRAMMING Public/Granted day:2014-01-02
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