Invention Grant
US08953388B2 Memory cell assembly including an avoid disturb cell 有权
存储单元组合包括避免干扰小区

Memory cell assembly including an avoid disturb cell
Abstract:
A memory array assembly and a method for performing a write operation without disturbing data stored in other SRAM cells are provided. The memory array assembly comprises a plurality of SRAM cells, a plurality of avoid-disturb cells, a plurality of sense amplifiers and a plurality of write drivers. The SRAM cells are arranged in rows and columns, wherein each column is coupled to an avoid-disturb cell, a sense amplifier, and a write driver. The avoid-disturb cell receives a select signal capable of assuming first or second states. An output of the sense amplifier is coupled to an input of the write driver when the select signal is in the first state. A data-in bus is coupled to the input of the write driver if the select signal is in the second state. The write driver then sends the output signal to the SRAM cell.
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