Invention Grant
- Patent Title: Grating external-cavity semiconductor laser and quasi-synchronous method thereof
- Patent Title (中): 光栅外腔半导体激光器及其准同步方法
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Application No.: US14155548Application Date: 2014-01-15
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Publication No.: US08953649B2Publication Date: 2015-02-10
- Inventor: Erjun Zang , Jianping Cao , Ye Li , Zhanjun Fang
- Applicant: National Institute of Metrology P.R. China
- Applicant Address: CN Beijing
- Assignee: National Institute of Metrology P.R. China
- Current Assignee: National Institute of Metrology P.R. China
- Current Assignee Address: CN Beijing
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: CN200810127037 20080618; CN200810116638 20080714
- Main IPC: H01S3/098
- IPC: H01S3/098 ; H01S3/086 ; H01S5/06 ; H01S5/14 ; H01S3/1055 ; H01S5/022

Abstract:
A method for quasi-synchronous tuning of wavelength or frequency of grating external-cavity semiconductor laser and a corresponding semiconductor laser are provided. A grating or mirror is rotated around a quasi-synchronous tuning point (Pq) as rotation center, so as to achieve the frequency selections by grating and resonance cavity in quasi-synchronous tuning, wherein the angle of the line between the quasi-synchronous tuning point (Pq) and a conventional synchronous tuning point (P0) with respect to the direction of light incident on the grating is determined according to the angle difference between the incidence angle and diffraction angle of light on the grating. According to present invention, approximately synchronous tuning of laser is achieved with a simple and flexible design.
Public/Granted literature
- US20140126589A1 GRATING EXTERNAL-CAVITY SEMICONDUCTOR LASER AND QUASI-SYNCHRONOUS METHOD THEREOF Public/Granted day:2014-05-08
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