Invention Grant
US08954824B2 Error detection or correction of stored signals after one or more heat events in one or more memory devices
有权
在一个或多个存储器件中的一个或多个加热事件之后的存储信号的错误检测或校正
- Patent Title: Error detection or correction of stored signals after one or more heat events in one or more memory devices
- Patent Title (中): 在一个或多个存储器件中的一个或多个加热事件之后的存储信号的错误检测或校正
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Application No.: US13406962Application Date: 2012-02-28
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Publication No.: US08954824B2Publication Date: 2015-02-10
- Inventor: Ferdinando Bedeschi
- Applicant: Ferdinando Bedeschi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
In some embodiments, a non-volatile memory device comprises an error correction component to re-program at least a portion of a non-volatile memory array at least in part in response to detection of one or more heat events and detection of one or more errors in contents of the at least a portion of the non-volatile memory array.
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