Invention Grant
US08956903B2 Planar cavity MEMS and related structures, methods of manufacture and design structures 有权
平面腔MEMS及相关结构,制造方法和设计结构

Planar cavity MEMS and related structures, methods of manufacture and design structures
Abstract:
A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.
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