Invention Grant
- Patent Title: Method and system of drying a microelectronic topography
- Patent Title (中): 干燥微电子地形的方法和系统
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Application No.: US12562450Application Date: 2009-09-18
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Publication No.: US08961701B2Publication Date: 2015-02-24
- Inventor: Mark I. Wagner , James P. DeYoung
- Applicant: Mark I. Wagner , James P. DeYoung
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: B08B3/04
- IPC: B08B3/04 ; H01L21/67 ; H01L21/02

Abstract:
Drying a microelectronic topography. At least some of the illustrative embodiments are methods that include placing a microelectronic topography inside a process chamber, providing a non-aqueous liquid to the process chamber until at least 90% of the volume of the process chamber contains the non-aqueous liquid, pressurizing the process chamber by way of a fluid different than the non-aqueous liquid, ceasing activity with respect to the process chamber until the non-aqueous liquid and fluid form a mixture that is substantially homogenous, venting the process chamber while simultaneously providing the fluid to the process chamber, and venting the process chamber in a manner which prevents formation of liquid in the process chamber.
Public/Granted literature
- US20100071726A1 METHOD AND SYSTEM OF DRYING A MICROELECTRONIC TOPOGRAPHY Public/Granted day:2010-03-25
Information query
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