Invention Grant
US08962403B2 Manufacturing method for switch and array substrate using etching solution comprising amine 有权
使用包含胺的蚀刻溶液的开关阵列基板的制造方法

Manufacturing method for switch and array substrate using etching solution comprising amine
Abstract:
The present invention discloses a manufacturing method for a switch and an array substrate. The method comprises: firstly, forming sequentially a first metal layer, an insulating layer, a semiconductor layer, an ohmic contact layer, a second metal layer, a third metal layer and a photoresist layer on a base substrate; after patterning the photoresist layer, etching the third metal layer and the second metal layer to form the input electrode and the output electrode of the switch; using a stripper comprising at least 30% by weight of amine in order to remove the photoresist layer and the residual second metal layer; and finally, etching the ohmic contact layer. Through the above steps, the present invention can avoid the electrical abnormality of the switch and increase process yield of the array substrate.
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