Invention Grant
US08962403B2 Manufacturing method for switch and array substrate using etching solution comprising amine
有权
使用包含胺的蚀刻溶液的开关阵列基板的制造方法
- Patent Title: Manufacturing method for switch and array substrate using etching solution comprising amine
- Patent Title (中): 使用包含胺的蚀刻溶液的开关阵列基板的制造方法
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Application No.: US13701863Application Date: 2012-11-23
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Publication No.: US08962403B2Publication Date: 2015-02-24
- Inventor: Yu-Lien Chou , Po-Lin Chen
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201210468449 20121119
- International Application: PCT/CN2012/085150 WO 20121123
- International Announcement: WO2014/075333 WO 20140522
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/302 ; H01L21/461 ; H01L29/45 ; H01L29/66

Abstract:
The present invention discloses a manufacturing method for a switch and an array substrate. The method comprises: firstly, forming sequentially a first metal layer, an insulating layer, a semiconductor layer, an ohmic contact layer, a second metal layer, a third metal layer and a photoresist layer on a base substrate; after patterning the photoresist layer, etching the third metal layer and the second metal layer to form the input electrode and the output electrode of the switch; using a stripper comprising at least 30% by weight of amine in order to remove the photoresist layer and the residual second metal layer; and finally, etching the ohmic contact layer. Through the above steps, the present invention can avoid the electrical abnormality of the switch and increase process yield of the array substrate.
Public/Granted literature
- US20140141576A1 Manufacturing Method for Switch and Array Substrate Public/Granted day:2014-05-22
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