A method for enabling fabrication of RMG devices having a low gate height variation and a substantially planar topography and resulting device are disclosed. Embodiments include: providing on a substrate two dummy gate electrodes, each between a pair of spacers; providing a source/drain region between the two dummy gate electrodes; and forming a first nitride layer over the two dummy gate electrodes and the source/drain region, wherein the first nitride layer comprises a first portion over the dummy gate electrodes and a second portion over the source/drain region, and the second portion has an upper surface substantially coplanar with an upper surface of the dummy gate electrodes.