Invention Grant
- Patent Title: Transistors with different threshold voltages
- Patent Title (中): 具有不同阈值电压的晶体管
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Application No.: US13282210Application Date: 2011-10-26
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Publication No.: US08962410B2Publication Date: 2015-02-24
- Inventor: Da Zhang , Konstantin V. Loiko , Spencer E. Williams , Brian A. Winstead
- Applicant: Da Zhang , Konstantin V. Loiko , Spencer E. Williams , Brian A. Winstead
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent David G. Dolezal
- Main IPC: H01L21/337
- IPC: H01L21/337 ; H01L21/8234 ; H01L21/8238
Abstract:
A first transistor and a second transistor are formed with different threshold voltages. A first gate is formed over the first region of a substrate for a first transistor and a second gate over the second region for a second transistor. The first region is masked. A threshold voltage of the second transistor is adjusted by implanting through the second gate while masking the first region. Current electrode regions are formed on opposing sides of the first gate and current electrode regions on opposing sides of the second gate.
Public/Granted literature
- US20130109141A1 TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES Public/Granted day:2013-05-02
Information query
IPC分类:
