Invention Grant
- Patent Title: N-type silicon solar cell with contact/protection structures
- Patent Title (中): 具有接触/保护结构的N型硅太阳能电池
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Application No.: US13040098Application Date: 2011-03-03
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Publication No.: US08962424B2Publication Date: 2015-02-24
- Inventor: Baomin Xu
- Applicant: Baomin Xu
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Bever, Hoffman & Harms, LLP
- Agent Patrick T. Bever
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0224 ; H01L31/068 ; H01L31/0216

Abstract:
A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional silicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer.
Public/Granted literature
- US20120222735A1 N-Type Silicon Solar Cell With Contact/Protection Structures Public/Granted day:2012-09-06
Information query
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