Invention Grant
US08962443B2 Semiconductor device having an airbridge and method of fabricating the same
有权
具有空中桥梁的半导体装置及其制造方法
- Patent Title: Semiconductor device having an airbridge and method of fabricating the same
- Patent Title (中): 具有空中桥梁的半导体装置及其制造方法
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Application No.: US13017414Application Date: 2011-01-31
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Publication No.: US08962443B2Publication Date: 2015-02-24
- Inventor: Timothy J. Whetten , Wayne P. Richling
- Applicant: Timothy J. Whetten , Wayne P. Richling
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/4763 ; H01L23/48 ; H01L21/70 ; H01L29/40 ; H01L23/52 ; H01L23/522 ; H01L23/482 ; H01L21/768

Abstract:
A method of forming a device having an airbridge on a substrate includes forming a plated conductive layer of the airbridge over at least a photoresist layer on a portion of the substrate, the plated conductive layer defining a corresponding opening for exposing a portion of the photoresist layer. The method further includes undercutting the photoresist layer to form a gap in the photoresist layer beneath the plated conductive layer at the opening, and forming an adhesion layer on the plated conductive layer and the exposed portion of the photoresist layer, the adhesion layer having a break at the gap beneath the plated conductive layer. The photoresist layer and a portion of the adhesion layer formed on the exposed portion of the photoresist layer is removed, which includes etching the photoresist layer through the break in the adhesion layer. An insulating layer is formed on at least the adhesion layer, enhancing adhesion of the insulating layer to the plated conductive layer.
Public/Granted literature
- US20120193795A1 SEMICONDUCTOR DEVICE HAVING AN AIRBRIDGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2012-08-02
Information query
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