Invention Grant
US08962458B2 Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
有权
生长氮化物半导体的方法和制造氮化物半导体衬底的方法
- Patent Title: Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
- Patent Title (中): 生长氮化物半导体的方法和制造氮化物半导体衬底的方法
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Application No.: US13599602Application Date: 2012-08-30
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Publication No.: US08962458B2Publication Date: 2015-02-24
- Inventor: Sung-soo Park , Moon-sang Lee
- Applicant: Sung-soo Park , Moon-sang Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0015247 20100219; KR10-2010-0082085 20100824
- Main IPC: H01L21/36
- IPC: H01L21/36 ; H01L21/02 ; C30B25/18 ; C30B29/40
Abstract:
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.
Public/Granted literature
- US20120319131A1 METHODS OF GROWING NITRIDE SEMICONDUCTORS AND METHODS OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATES Public/Granted day:2012-12-20
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