Invention Grant
- Patent Title: High temperature anneal for stress modulation
- Patent Title (中): 高温退火应力调制
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Application No.: US13208435Application Date: 2011-08-12
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Publication No.: US08962477B2Publication Date: 2015-02-24
- Inventor: Meng-Hsuan Chan , Wei-Yang Lee , Da-Yuan Lee , Kuang-Yuan Hsu
- Applicant: Meng-Hsuan Chan , Wei-Yang Lee , Da-Yuan Lee , Kuang-Yuan Hsu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L29/78
Abstract:
A method for modulating stress in films formed in semiconductor device manufacturing provides for high temperature annealing of an as-deposited compressive film such as titanium nitride. The high temperature annealing converts the initially compressive film to a tensile film without compromising other film qualities and characteristics. The converted tensile films are particularly advantageous as work function adjusting films in PMOS transistor devices and are advantageously used in conjunction with additional metal gate materials.
Public/Granted literature
- US20130040455A1 HIGH TEMPERATURE ANNEAL FOR STRESS MODULATION Public/Granted day:2013-02-14
Information query
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