Invention Grant
- Patent Title: Interconnect structures containing nitrided metallic residues
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Application No.: US13891869Application Date: 2013-05-10
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Publication No.: US08962479B2Publication Date: 2015-02-24
- Inventor: Chih-Chao Yang , Stephan A. Cohen
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/522 ; H01L21/768 ; H01L23/532

Abstract:
A metal cap is formed on an exposed upper surface of a conductive structure that is embedded within an interconnect dielectric material. During the formation of the metal cap, metallic residues simultaneously form on an exposed upper surface of the interconnect dielectric material. A thermal nitridization process or plasma nitridation process is then performed which partially or completely converts the metallic residues into nitrided metallic residues. During the nitridization process, a surface region of the interconnect dielectric material and a surface region of the metal cap also become nitrided.
Public/Granted literature
- US20140332964A1 INTERCONNECT STRUCTURES CONTAINING NITRIDED METALLIC RESIDUES Public/Granted day:2014-11-13
Information query
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