Invention Grant
- Patent Title: Methods of fabricating semiconductor devices and semiconductor devices fabricated thereby
- Patent Title (中): 制造半导体器件和半导体器件的方法
-
Application No.: US14139502Application Date: 2013-12-23
-
Publication No.: US08962491B2Publication Date: 2015-02-24
- Inventor: Keun Do Ban , Jung Gun Heo , Cheol Kyu Bok , Myoung Soo Kim
- Applicant: SK Hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2013-0088353 20130725
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/308 ; H01L27/24 ; H01L27/108

Abstract:
The method includes forming an array of first separation walls on an underlying layer. A block co-polymer (BCP) layer is formed to fill inside regions of the first separation walls and gaps between the first separation walls. The BCP layer is phase-separated to include first domains that provide second separation walls covering inner sidewalls and outer sidewalls of the first separation walls and second domains that are separated from each other by the first domains.
Public/Granted literature
- US20150031185A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES FABRICATED THEREBY Public/Granted day:2015-01-29
Information query
IPC分类: