Invention Grant
US08962491B2 Methods of fabricating semiconductor devices and semiconductor devices fabricated thereby 有权
制造半导体器件和半导体器件的方法

Methods of fabricating semiconductor devices and semiconductor devices fabricated thereby
Abstract:
The method includes forming an array of first separation walls on an underlying layer. A block co-polymer (BCP) layer is formed to fill inside regions of the first separation walls and gaps between the first separation walls. The BCP layer is phase-separated to include first domains that provide second separation walls covering inner sidewalls and outer sidewalls of the first separation walls and second domains that are separated from each other by the first domains.
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