Invention Grant
- Patent Title: Apparatus for and method of heat-treating thin film on surface of substrate
- Patent Title (中): 薄膜表面热处理设备及方法
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Application No.: US13272657Application Date: 2011-10-13
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Publication No.: US08963050B2Publication Date: 2015-02-24
- Inventor: Shinichi Kato , Hiroki Kiyama
- Applicant: Shinichi Kato , Hiroki Kiyama
- Applicant Address: JP
- Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee Address: JP
- Agency: Ostrolenk Faber LLP
- Priority: JP2010-231093 20101014
- Main IPC: F27D11/00
- IPC: F27D11/00 ; H05B7/18 ; H05B3/68 ; F26B3/30 ; F27B17/00 ; F27D7/02 ; H01L21/67

Abstract:
A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.
Public/Granted literature
- US20120093492A1 APPARATUS FOR AND METHOD OF HEAT-TREATING THIN FILM ON SURFACE OF SUBSTRATE Public/Granted day:2012-04-19
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