Invention Grant
US08963064B2 Photosensor having upper and lower electrodes with amorphous silicon film and n-type amorphous silicon film therebetween and photosensor array 有权
光电传感器具有具有非晶硅膜的上电极和下电极以及其间的n型非晶硅膜和光电传感器阵列

Photosensor having upper and lower electrodes with amorphous silicon film and n-type amorphous silicon film therebetween and photosensor array
Abstract:
A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.
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