Invention Grant
- Patent Title: Semiconductor device including a plurality of different functional elements and method of manufacturing the same
- Patent Title (中): 包括多个不同功能元件的半导体器件及其制造方法
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Application No.: US12405505Application Date: 2009-03-17
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Publication No.: US08963124B2Publication Date: 2015-02-24
- Inventor: Masanobu Miyao , Hiroshi Nakashima , Taizoh Sadoh , Ichiro Mizushima , Masaki Yoshimaru
- Applicant: Masanobu Miyao , Hiroshi Nakashima , Taizoh Sadoh , Ichiro Mizushima , Masaki Yoshimaru
- Applicant Address: JP Yokohama-shi
- Assignee: Semiconductor Technology Academic Research Center
- Current Assignee: Semiconductor Technology Academic Research Center
- Current Assignee Address: JP Yokohama-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-070403 20080318
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L27/06 ; H01L21/02 ; H01L29/66
Abstract:
At least first and second Si1-xGex (0≦x≦1) layers are formed on an insulating film. At least first and second material layers are formed correspondingly to the at least first and second Si1-xGex (0≦x≦1) layers. A lattice constant of the first Si1-xGex (0≦x≦1) layer is matched with a lattice constant of the first material layer. A lattice constant of the second Si1-xGex (0≦x≦1) layer is matched with a lattice constant of the second material layer.
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