Invention Grant
US08963126B2 Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material
有权
包括混合半导体介电材料的低电压N沟道晶体管
- Patent Title: Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material
- Patent Title (中): 包括混合半导体介电材料的低电压N沟道晶体管
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Application No.: US12743977Application Date: 2009-01-07
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Publication No.: US08963126B2Publication Date: 2015-02-24
- Inventor: Howard Edan Katz , Bhola Nath Pal , Kevin Cua See , Byung Jun Jung
- Applicant: Howard Edan Katz , Bhola Nath Pal , Kevin Cua See , Byung Jun Jung
- Applicant Address: US MD Baltimore
- Assignee: The Johns Hopkins University
- Current Assignee: The Johns Hopkins University
- Current Assignee Address: US MD Baltimore
- Agency: Venable LLP
- Agent Henry J. Daley; Daniel A. Kopp
- International Application: PCT/US2009/030332 WO 20090107
- International Announcement: WO2009/089283 WO 20090716
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L35/24 ; H01L51/00 ; H01L29/40 ; H01L51/05 ; H01G9/00 ; H01G9/022 ; H01G9/045 ; H01L51/10 ; C07D333/50 ; C07D409/00 ; C07D495/22

Abstract:
Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.
Public/Granted literature
- US20110024727A1 LOW-VOLTAGE, N-CHANNEL HYBRID TRANSISTORS Public/Granted day:2011-02-03
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