Invention Grant
- Patent Title: Tunable fin-SCR for robust ESD protection
- Patent Title (中): 可调谐鳍片SCR，用于强大的ESD保护
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Application No.: US13411667Application Date: 2012-03-05
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Publication No.: US08963201B2Publication Date: 2015-02-24
- Inventor: Mayank Shrivastava , Christian Russ , Harald Gossner
- Applicant: Mayank Shrivastava , Christian Russ , Harald Gossner
- Applicant Address: DE Neubiberg
- Assignee: Intel Mobile Communications GmbH
- Current Assignee: Intel Mobile Communications GmbH
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned between the anode and the junction region. Other devices and methods are also disclosed.
Public/Granted literature
- US20130229223A1 Tunable Fin-SCR for Robust ESD Protection Public/Granted day:2013-09-05
Information query
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