Invention Grant
US08963209B2 Enhancement-mode HFET circuit arrangement having high power and a high threshold voltage
有权
具有高功率和高阈值电压的增强型HFET电路装置
- Patent Title: Enhancement-mode HFET circuit arrangement having high power and a high threshold voltage
- Patent Title (中): 具有高功率和高阈值电压的增强型HFET电路装置
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Application No.: US13758574Application Date: 2013-02-04
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Publication No.: US08963209B2Publication Date: 2015-02-24
- Inventor: Xiaobin Xin , Milan Pophristic , Michael Shur
- Applicant: Power Integrations, Inc.
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc.
- Current Assignee: Power Integrations, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Mayer & Williams PC
- Agent Stuart H. Mayer
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L27/06 ; H01L29/40 ; H01L29/417 ; H01L29/20 ; H01L29/423 ; H03K17/687
Abstract:
A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes a load resistive element connected to the common junction. The drain of the enhancement-mode HFET serves as the input drain node, the source of the enhancement-mode HFET serves as the input source node and a second terminal of the voltage shifter serves as the input gate node.
Public/Granted literature
- US20130146891A1 ENHANCEMENT-MODE HFET CIRCUIT ARRANGEMENT HAVING HIGH POWER AND A HIGH THRESHOLD VOLTAGE Public/Granted day:2013-06-13
Information query
IPC分类:
