Invention Grant
US08963211B2 Method, structure and design structure for customizing history effects of SOI circuits
有权
定制SOI电路历史效应的方法,结构和设计结构
- Patent Title: Method, structure and design structure for customizing history effects of SOI circuits
- Patent Title (中): 定制SOI电路历史效应的方法,结构和设计结构
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Application No.: US13793185Application Date: 2013-03-11
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Publication No.: US08963211B2Publication Date: 2015-02-24
- Inventor: Brent A. Anderson , Andres Bryant , Edward J. Nowak
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Michael LeStrange
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/423 ; H01L29/49 ; H01L21/02

Abstract:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed over an active region of a FET and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric. The low-leakage dielectric has a lower leakage than the high-leakage dielectric. Also provided is a structure and method of fabricating the structure.
Public/Granted literature
- US20130187243A1 METHOD, STRUCTURE AND DESIGN STRUCTURE FOR CUSTOMIZING HISTORY EFFECTS OF SOI CIRCUITS Public/Granted day:2013-07-25
Information query
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