Invention Grant
- Patent Title: Low voltage and high driving charge pump
- Patent Title (中): 低电压和高驱动电荷泵
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Application No.: US13482063Application Date: 2012-05-29
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Publication No.: US08963623B2Publication Date: 2015-02-24
- Inventor: Yuan-Long Siao
- Applicant: Yuan-Long Siao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
The present disclosure relates to a charge pump circuit having one or more voltage multiplier circuits that enable generation of an output signal having a higher output voltage. In one embodiment, the charge pump circuit comprises a NMOS transistor having a drain connected to a supply voltage and a source connected to a chain of diode connected NMOS transistors coupled in series. A first voltage multiplier circuit is configured to generate a first two-phase output signal having a maximum voltage value that is twice the supply voltage. The first two-phase output signal is applied to the gate of the NMOS transistor, forming a conductive channel between the drain and the source, thereby allowing the supply voltage to pass through the NMOS transistor without a threshold voltage drop. Therefore, degradation of the charge pump output voltage due to voltage drops of the NMOS transistor is reduced, resulting in larger output voltages.
Public/Granted literature
- US20130222050A1 Low Voltage and High Driving Charge Pump Public/Granted day:2013-08-29
Information query
IPC分类: