Invention Grant
- Patent Title: System and method for boosted switches
- Patent Title (中): 升压开关的系统和方法
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Application No.: US13527104Application Date: 2012-06-19
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Publication No.: US08963630B2Publication Date: 2015-02-24
- Inventor: Jose Luis Ceballos , Christian Reindl
- Applicant: Jose Luis Ceballos , Christian Reindl
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H03K5/00

Abstract:
In accordance with an embodiment, a method includes activating a first semiconductor switch having a first switch node coupled to a first input of a bootstrap circuit, a second switch node, and a control node coupled to a first end of a capacitor of the bootstrap circuit. A first end of the capacitor is coupled to the first input of the bootstrap circuit and a second end of the capacitor is set to a first voltage. Next, the first end of the capacitor is decoupled from the first input of the bootstrap circuit, and the second end of the capacitor is set to a second voltage. The control node is boosted to a first activation voltage that turns on the first semiconductor switch.
Public/Granted literature
- US20130335055A1 System and Method for Boosted Switches Public/Granted day:2013-12-19
Information query
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