Invention Grant
- Patent Title: On-chip slow-wave through-silicon via coplanar waveguide structures, method of manufacture and design structure
- Patent Title (中): 通过共面波导结构的片上慢波通硅,制造方法和设计结构
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Application No.: US13156935Application Date: 2011-06-09
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Publication No.: US08963657B2Publication Date: 2015-02-24
- Inventor: Essam Mina , Guoan Wang , Wayne H. Woods, Jr.
- Applicant: Essam Mina , Guoan Wang , Wayne H. Woods, Jr.
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01P3/08
- IPC: H01P3/08 ; G06F17/50 ; H01L21/768 ; H01L23/48 ; H01P3/00

Abstract:
On-chip, high performance, slow-wave coplanar waveguide with through-silicon via structures, method of manufacture and design structures for integrated circuits are provided herein. The method includes forming at least one ground plane layer in a substrate and forming a signal layer in the substrate, in a same plane layer as the at least one ground. The method further includes forming at least one metal filled through-silicon via between the at least one ground plane layer and the signal layer.
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