Invention Grant
US08964081B2 Solid-state image sensor including a photoelectric conversion element, a charge retaining element, and a light shielding element, method for producing the same solid-state image sensor, and electronic apparatus including the same solid-state image sensor
有权
包括光电转换元件，电荷保持元件和遮光元件的固态图像传感器，用于制造相同的固态图像传感器的方法和包括该固态图像传感器的电子设备
- Patent Title: Solid-state image sensor including a photoelectric conversion element, a charge retaining element, and a light shielding element, method for producing the same solid-state image sensor, and electronic apparatus including the same solid-state image sensor
- Patent Title (中): 包括光电转换元件，电荷保持元件和遮光元件的固态图像传感器，用于制造相同的固态图像传感器的方法和包括该固态图像传感器的电子设备
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Application No.: US13606828Application Date: 2012-09-07
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Publication No.: US08964081B2Publication Date: 2015-02-24
- Inventor: Tomohiro Ohkubo , Suzunori Endo
- Applicant: Tomohiro Ohkubo , Suzunori Endo
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2011-203337 20110916
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335 ; H01L27/146
Abstract:
A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
Public/Granted literature
- US20130070131A1 SOLID-STATE IMAGE SENSOR, METHOD FOR PRODUCING SOLID-STATE IMAGE SENSOR, AND ELECTRONIC APPARATUS Public/Granted day:2013-03-21
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