Invention Grant
- Patent Title: Semiconductor device having a non-volatile memory built-in
- Patent Title (中): 具有内置非易失性存储器的半导体器件
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Application No.: US14114889Application Date: 2012-12-05
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Publication No.: US08964460B2Publication Date: 2015-02-24
- Inventor: Takashi Ishiguro , Kenichi Shimomai , Kyoko Nakajima , Tetsuo Hironaka , Kazuya Tanigawa
- Applicant: Taiyo Yuden Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Taiyo Yuden Co., Ltd.
- Current Assignee: Taiyo Yuden Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Chen Yoshimura LLP
- Priority: JP2012-025623 20120208
- International Application: PCT/JP2012/081569 WO 20121205
- International Announcement: WO2013/118378 WO 20130815
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L45/00 ; H01L27/24
Abstract:
A semiconductor device of this invention has an array of non-volatile memory cells, may operate immediately after power activation to write data on and read out the data without reading from an external portion. Further, this invention is free from the lithographic process of the phase-change layer on the manufacturing process.
Public/Granted literature
- US20140071749A1 SEMICONDUCTOR DEVICE HAVING A NON-VOLATILE MEMORY BUILT-IN Public/Granted day:2014-03-13
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