Invention Grant
US08964463B2 Read disturb control in a nonvolatile semiconductor memory device having P-type memory cell transistor
有权
具有P型存储单元晶体管的非易失性半导体存储器件中的读取干扰控制
- Patent Title: Read disturb control in a nonvolatile semiconductor memory device having P-type memory cell transistor
- Patent Title (中): 具有P型存储单元晶体管的非易失性半导体存储器件中的读取干扰控制
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Application No.: US13855902Application Date: 2013-04-03
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Publication No.: US08964463B2Publication Date: 2015-02-24
- Inventor: Natsuo Ajika , Taku Ogura , Masaaki Mihara
- Applicant: Genusion, Inc.
- Applicant Address: JP Hyogo
- Assignee: Genusion, Inc.
- Current Assignee: Genusion, Inc.
- Current Assignee Address: JP Hyogo
- Agency: The Marbury Law Group, PLLC
- Priority: JP2012-087597 20120406
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C11/56
Abstract:
A nonvolatile semiconductor memory device is provided which includes: a P-type memory cell transistor having a source, a drain, a gate, and a charge storage layer; and a control circuit which, in a case where the P-type memory cell transistor has its threshold greater than or equal to a first value (Vr) and less than or equal to a second value (Vrd), carries out a program operation of injecting electrons into the charge storage layer.
Public/Granted literature
- US20130265823A1 Nonvolatile Semiconductor Memory Device Cross-Reference to Related Applications Public/Granted day:2013-10-10
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