Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13901025Application Date: 2013-05-23
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Publication No.: US08964478B2Publication Date: 2015-02-24
- Inventor: Shinichi Takayama , Akira Kotabe , Kiyoo Itoh , Tomonori Sekiguchi
- Applicant: Elpida Memory, Inc.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-123055 20100528
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C7/08 ; G11C11/4091 ; G11C11/4094

Abstract:
A semiconductor device includes a sense amplifier circuit. The sense amplifier circuit includes a cross-coupled first transistor and second transistor that perform amplification. The sources of the cross-coupled transistors are respectively connected in series with a third transistor and a fourth transistor, and electrical current supply capability of the third and fourth transistors is controlled by a control voltage given to control electrodes of the third and fourth transistors. In a data retaining period, a minimum sub-threshold current necessary for retaining the data is flowed to the third and fourth transistors according to the control voltage, and bit line potential is maintained.
Public/Granted literature
- US20130258793A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-10-03
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