Memory technology adapted to store data in a binary format. Such technology includes a semiconductor memory device having memory cells, each having a substrate and at least three graphene layers that are oriented to define a graphene stack disposed in a plane. The graphene stack of each memory cell is connected to a bit line and to a ground connection so that a conductive path is defined in the plane of the graphene stack. The in-plane conductivity of the graphene stack of each memory cell is altered during programming of the memory cell to define a binary value of bits stored in the memory cell.