Invention Grant
- Patent Title: Defective memory column replacement with load isolation
- Patent Title (中): 带有负载隔离的内存列替换不良
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Application No.: US13733948Application Date: 2013-01-04
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Publication No.: US08964493B2Publication Date: 2015-02-24
- Inventor: Silke Penth , Raphael Polig , Tobias Werner , Alexander Woerner
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Daniel Simek
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C17/18 ; G11C29/04

Abstract:
Exemplary embodiments of the present invention disclose a method and system for substituting a group of memory cells for a defective group of memory cells in a memory. In a step, an exemplary embodiment replaces a signal path to a group of defective memory cells with a signal path to a redundant group of memory cells. In another step, an exemplary embodiment isolates the signal path to the redundant group of memory cells from a load imposed by the signal path to the replaced group of defective memory cells.
Public/Granted literature
- US20140192602A1 DEFECTIVE MEMORY COLUMN REPLACEMENT WITH LOAD ISOLATION Public/Granted day:2014-07-10
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