Invention Grant
US08964493B2 Defective memory column replacement with load isolation 有权
带有负载隔离的内存列替换不良

Defective memory column replacement with load isolation
Abstract:
Exemplary embodiments of the present invention disclose a method and system for substituting a group of memory cells for a defective group of memory cells in a memory. In a step, an exemplary embodiment replaces a signal path to a group of defective memory cells with a signal path to a redundant group of memory cells. In another step, an exemplary embodiment isolates the signal path to the redundant group of memory cells from a load imposed by the signal path to the replaced group of defective memory cells.
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