Invention Grant
- Patent Title: System and method for defect analysis of a substrate
- Patent Title (中): 衬底缺陷分析系统和方法
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Application No.: US13673664Application Date: 2012-11-09
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Publication No.: US08965102B2Publication Date: 2015-02-24
- Inventor: Yan-Wei Tien , Chi-Hung Liao , Ming-Yi Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G01N21/00 ; G06K9/03

Abstract:
The present disclosure provides a method including providing a first image and a second image. The first image is of a substrate having a defect and the second image is of a reference substrate. A difference between the first image and the second image is determined. A simulation model is used to generate a simulation curve corresponding to the difference and the substrate dispositioned based on the simulation curve. In another embodiment, the scan of a substrate is used to generate a statistical process control chart.
Public/Granted literature
- US20140133736A1 SYSTEM AND METHOD FOR DEFECT ANALYSIS OF A SUBSTRATE Public/Granted day:2014-05-15
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