Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14024141Application Date: 2013-09-11
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Publication No.: US08968017B2Publication Date: 2015-03-03
- Inventor: Keiko Kawamura , Hitoshi Kobayashi , Yusuke Kawaguchi , Shunsuke Katoh
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2013-061132 20130322
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
According to one embodiment, a semiconductor memory device includes a first semiconductor layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer is a first conductivity type. The second semiconductor layer is provided in a surface region of the first semiconductor layer and is the first conductivity type. The first electrode is provided inside a first trench extending in the first direction and opened to a surface of the second semiconductor layer. The second electrode is provided in a second trench extending in a second direction crossing the first direction and opened to the surface of the second semiconductor layer. A dimension from the surface of the second semiconductor layer to a lower end of the second electrode is shorter than a dimension from the surface of the second semiconductor layer to a lower end of the first electrode.
Public/Granted literature
- US20140284707A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-09-25
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