Invention Grant
- Patent Title: Atomic layer deposition apparatus
- Patent Title (中): 原子层沉积装置
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Application No.: US12649234Application Date: 2009-12-29
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Publication No.: US08968476B2Publication Date: 2015-03-03
- Inventor: In Chul Shin , Kyung Joon Kim
- Applicant: In Chul Shin , Kyung Joon Kim
- Applicant Address: KR Gyeonggi-Do
- Assignee: K.C. Tech Co., Ltd.
- Current Assignee: K.C. Tech Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Marger Johnson & McCollom
- Priority: KR10-2008-0135963 20081229; KR10-2009-0047519 20090529
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/687 ; C23C16/455 ; H01L21/677

Abstract:
An atomic deposition apparatus is provided for simultaneously loading/unloading a plurality of substrates. The atomic deposition apparatus which may load/unload the plurality of substrates when transmitting the plurality of substrates to a process module, includes a loading/unloading module for loading/unloading a substrate, a process module including a plurality of process chambers for simultaneously receiving a plurality of substrates and performing a deposition process, each of the plurality of process chambers including a gas spraying unit having an exhaust portion by which an exhaust gas is drawn in from inside the process chamber and the drawn in gas is exhausted above the process chamber, and a transfer module including a transfer robot provided between the loading/unloading module and the process module, the transfer robot being adopted for simultaneously holding the plurality of substrates while transporting the substrate.
Public/Granted literature
- US20100186669A1 ATOMIC LAYER DEPOSITION APPARATUS Public/Granted day:2010-07-29
Information query
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