Invention Grant
- Patent Title: Imprint lithography
- Patent Title (中): 印刷光刻
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Application No.: US12912586Application Date: 2010-10-26
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Publication No.: US08968630B2Publication Date: 2015-03-03
- Inventor: Yvonne Wendela Kruijt-Stegeman , Arie Jeffrey Den Boef , Andre Bernardus Jeunink
- Applicant: Yvonne Wendela Kruijt-Stegeman , Arie Jeffrey Den Boef , Andre Bernardus Jeunink
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: B29C59/02
- IPC: B29C59/02 ; G03F7/00 ; B82Y10/00 ; B82Y40/00 ; G03F9/00

Abstract:
An imprint lithography template is provided with an alignment mark, wherein the alignment mark is formed from dielectric material having a refractive index which differs from the refractive index of the imprint lithography template, the dielectric material having a thickness which is such that it provides a phase difference between alignment radiation which has passed through the dielectric material and alignment radiation which has not passed through the dielectric material.
Public/Granted literature
- US20110095455A1 IMPRINT LITHOGRAPHY Public/Granted day:2011-04-28
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