Invention Grant
US08968864B2 Sealed porous materials, methods for making them, and semiconductor devices comprising them
有权
密封多孔材料，制造它们的方法和包括它们的半导体器件
- Patent Title: Sealed porous materials, methods for making them, and semiconductor devices comprising them
- Patent Title (中): 密封多孔材料，制造它们的方法和包括它们的半导体器件
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Application No.: US13622141Application Date: 2012-09-18
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Publication No.: US08968864B2Publication Date: 2015-03-03
- Inventor: Frederik Goethals , Pascal Van Der Voort , Isabel Van Driessche , Mikhail Baklanov
- Applicant: IMEC , Universiteit Gent
- Applicant Address: BE Leuven BE Ghent
- Assignee: IMEC,Universiteit Gent
- Current Assignee: IMEC,Universiteit Gent
- Current Assignee Address: BE Leuven BE Ghent
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: B32B3/26
- IPC: B32B3/26 ; H01L23/58 ; H01L21/31 ; H01L21/3105 ; H01L21/02
Abstract:
A method for at least partially sealing a porous material is provided, comprising forming a sealing layer onto the porous material by applying a sealing compound comprising oligomers wherein the oligomers are formed by ageing a precursor solution comprising cyclic carbon bridged organosilica and/or bridged organosilanes. The method is especially designed for low k dielectric porous materials to be incorporated into semiconductor devices.
Public/Granted literature
- US20130075876A1 SEALED POROUS MATERIALS, METHODS FOR MAKING THEM, AND SEMICONDUCTOR DEVICES COMPRISING THEM Public/Granted day:2013-03-28
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