A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a direction and a direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.