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US08969111B2 Method for manufacturing display device 有权
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Method for manufacturing display device
Abstract:
An IZO layer (113) is formed on an a-ITO layer (112), and resist patterns (202R, 202G) having different film thicknesses are formed in at least sub-pixels (71R, 71G). The a-ITO layer (112) and the IZO layer (113) are etched by utilizing (i) a reduction in thickness of the resist patterns (202R, 202G) by ashing and (ii) a change in etching tolerance due to transformation from the a-ITO layer (112) into a p-ITO layer (114).
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