Invention Grant
US08969113B2 Optical device structure using GaN substrates and growth structures for laser applications
有权
使用GaN衬底的光学器件结构和用于激光应用的生长结构
- Patent Title: Optical device structure using GaN substrates and growth structures for laser applications
- Patent Title (中): 使用GaN衬底的光学器件结构和用于激光应用的生长结构
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Application No.: US14229738Application Date: 2014-03-28
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Publication No.: US08969113B2Publication Date: 2015-03-03
- Inventor: James W. Raring
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
Public/Granted literature
- US20150024526A1 OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS Public/Granted day:2015-01-22
Information query
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