Invention Grant
- Patent Title: Integrated carbon nanotube field effect transistor and nanochannel for sequencing
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Application No.: US13971442Application Date: 2013-08-20
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Publication No.: US08969118B2Publication Date: 2015-03-03
- Inventor: Ali Afzali-Ardakani , Gustavo A. Stolovitzky , Deqiang Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; G01N27/414 ; B82Y15/00 ; B82Y30/00 ; G01N27/02 ; G01N33/487

Abstract:
A mechanism is provided for base recognition of an integrated transistor and nanochannel. A target molecule is forced down to a carbon nanotube a single base at a time in the nanochannel by applying a gate voltage to a top electrode, and/or a narrow thickness of the nanochannel. The nanochannel exposes an exposed portion of the carbon nanotube at a bottom wall, and the top electrode is positioned over the exposed portion. The exposed portion of the carbon nanotube is smaller than the distance between bases to only accommodate the single base at a time. The target molecule is stretched by the narrow thickness and by applying a traverse voltage across a length direction of the nanochannel. The target molecule is frictionally restricted by the narrow thickness of the nanochannel to stretch is restrictedly translocates in the length direction. Current is measured to determine an identity of the single base.
Public/Granted literature
- US20140152330A1 INTEGRATED CARBON NANOTUBE FIELD EFFECT TRANSISTOR AND NANOCHANNEL FOR SEQUENCING Public/Granted day:2014-06-05
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