Invention Grant
US08969127B2 Apparatus for and method of fabricating an electronic device by transfer of material onto a substrate
有权
用于通过将材料转移到基底上来制造电子器件的装置和方法
- Patent Title: Apparatus for and method of fabricating an electronic device by transfer of material onto a substrate
- Patent Title (中): 用于通过将材料转移到基底上来制造电子器件的装置和方法
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Application No.: US12738173Application Date: 2008-10-17
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Publication No.: US08969127B2Publication Date: 2015-03-03
- Inventor: Kate Stone
- Applicant: Kate Stone
- Applicant Address: GB Cambridgeshire
- Assignee: Novalia Ltd
- Current Assignee: Novalia Ltd
- Current Assignee Address: GB Cambridgeshire
- Agency: McCarter & English, LLP
- Agent David R. Burns
- Priority: GB0720392.0 20071018
- International Application: PCT/GB2008/050950 WO 20081017
- International Announcement: WO2009/050516 WO 20090423
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L51/00 ; H01L51/05
Abstract:
A method of fabricating an electronic device comprises providing a layer structure (48) supported on a first substrate (34), providing a second, patterned substrate (28) and transferring selected areas (58) of the first layer structure onto the second substrate.
Public/Granted literature
- US20100295028A1 Method of Fabricating an Electronic Device Public/Granted day:2010-11-25
Information query
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