Invention Grant
- Patent Title: Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
- Patent Title (中): 绝缘膜，其形成方法，半导体器件及其制造方法
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Application No.: US13675140Application Date: 2012-11-13
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Publication No.: US08969130B2Publication Date: 2015-03-03
- Inventor: Tetsuhiro Tanaka , Erika Takahashi , Yuki Imoto , Yuhei Sato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-252213 20111118
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/786 ; H01L21/36 ; H01L29/66 ; H01L21/02
Abstract:
An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.
Public/Granted literature
- US20130126861A1 INSULATING FILM, FORMATION METHOD THEREOF, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-05-23
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