Invention Grant
- Patent Title: Programmable poly fuse using a P-N junction breakdown
- Patent Title (中): 可编程多晶硅熔丝使用P-N结击穿
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Application No.: US13839479Application Date: 2013-03-15
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Publication No.: US08969141B2Publication Date: 2015-03-03
- Inventor: Laurentiu Vasiliu
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L29/66 ; H01L23/525 ; H01L21/326

Abstract:
According to one exemplary embodiment, a programmable poly fuse includes a P type resistive poly segment forming a P-N junction with an adjacent N type resistive poly segment. The programmable poly fuse further includes a P side silicided poly line contiguous with the P type resistive poly segment and coupled to a P side terminal of the poly fuse. The programmable poly fuse further includes an N side silicided poly line contiguous with the N type resistive poly segment and coupled to an N side terminal of the poly fuse. During a normal operating mode, a voltage less than or equal to approximately 2.5 volts is applied to the N side terminal of the programmable poly fuse. A voltage higher than approximately 3.5 volts is required at the N side terminal of the poly fuse to break down the P-N junction.
Public/Granted literature
- US20130224933A1 Programmable Poly Fuse Using a P-N Junction Breakdown Public/Granted day:2013-08-29
Information query
IPC分类: