A field-effect transistor (FET) and methods for fabricating such. The FET includes a substrate having a crystalline orientation, a source region in the substrate, and a drain region in the substrate. Gate spacers are positioned over the source region and the drain region. The gate spacers include a gate spacer height. A source contact physically and electrically contacts the source region and extends beyond the gate spacer height. A drain contact physically and electrically contacts the drain region and extends beyond the gate spacer height. The source and drain contacts have the same crystalline orientation as the substrate.