Invention Grant
US08969156B2 Semiconductor structures and methods with high mobility and high energy bandgap materials
有权
具有高迁移率和高能带隙材料的半导体结构和方法
- Patent Title: Semiconductor structures and methods with high mobility and high energy bandgap materials
- Patent Title (中): 具有高迁移率和高能带隙材料的半导体结构和方法
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Application No.: US14460105Application Date: 2014-08-14
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Publication No.: US08969156B2Publication Date: 2015-03-03
- Inventor: Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L21/02
Abstract:
An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first isolation region and a second isolation region. Each of first and second isolation regions extends below a first surface of the substrate between the first and second isolation regions. The high energy bandgap material is over the first surface of the substrate and is disposed between the first and second isolation regions. The high carrier mobility material is over the high energy bandgap material. The high carrier mobility material extends higher than respective top surfaces of the first and second isolation regions to form a fin.
Public/Granted literature
- US20140357049A1 Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials Public/Granted day:2014-12-04
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